Journal article
Large Fermi surface of heavy electrons at the border of Mott insulating state in NiS2
- Abstract:
- One early triumph of quantum physics is the explanation why some materials are metallic whereas others are insulating. While a treatment based on single electron states is correct for most materials this approach can fail spectacularly, when the electrostatic repulsion between electrons causes strong correlations. Not only can these favor new and subtle forms of matter, such as magnetism or superconductivity, they can even cause the electrons in a half-filled energy band to lock into position, producing a correlated, or Mott insulator. The transition into the Mott insulating state raises important fundamental questions. Foremost among these is the fate of the electronic Fermi surface and the associated charge carrier mass, as the Mott transition is approached. We report the first direct observation of the Fermi surface on the metallic side of a Mott insulating transition by high pressure quantum oscillatory measurements in NiS2. Our results point at a large Fermi surface consistent with Luttinger’s theorem and a strongly enhanced quasiparticle effective mass. These two findings are in line with central tenets of the Brinkman-Rice picture of the correlated metal near the Mott insulating state and rule out alternative scenarios in which the carrier concentration vanishes continuously at the metal-insulator transition.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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(Preview, Version of record, pdf, 905.9KB, Terms of use)
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- Publisher copy:
- 10.1038/srep25335
Authors
- Publisher:
- Nature Research
- Journal:
- Scientific Reports More from this journal
- Volume:
- 6
- Publication date:
- 2019-05-12
- Acceptance date:
- 2019-04-14
- DOI:
- EISSN:
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2045-2322
- Language:
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English
- Keywords:
- Pubs id:
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pubs:634836
- UUID:
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uuid:76e5e3c9-1988-489b-89ce-eea5c8047dc2
- Local pid:
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pubs:634836
- Source identifiers:
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634836
- Deposit date:
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2019-11-05
Terms of use
- Copyright holder:
- Friedemann et al
- Copyright date:
- 2019
- Notes:
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© The Author(s) 2016
This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material.
- Licence:
- CC Attribution (CC BY)
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