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Polarization memory in the nonpolar magnetic ground state of multiferroic CuFeO2

Abstract:

We investigate polarization memory effects in single-crystal CuFeO2, which has a magnetically induced ferroelectric phase at low temperatures and applied B fields between 7.5 and 13 T. Following electrical poling of the ferroelectric phase, we find that the nonpolar collinear antiferromagnetic ground state at B=0 T retains a strong memory of the polarization magnitude and direction, such that upon reentering the ferroelectric phase a net polarization of comparable magnitude to the initial pol...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1103/PhysRevB.94.144411

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Expand authors...
Publisher:
American Physical Society Publisher's website
Journal:
Physical Review B Journal website
Issue:
14
Publication date:
2016-10-01
Acceptance date:
2016-08-16
DOI:
EISSN:
2469-9969
ISSN:
2469-9950
Source identifiers:
653404
Keywords:
Pubs id:
pubs:653404
UUID:
uuid:763e8d1e-e1d1-433c-9696-4edc87e7eb1b
Local pid:
pubs:653404
Deposit date:
2016-11-15

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