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Polarization memory in the nonpolar magnetic ground state of multiferroic CuFeO2

Abstract:

We investigate polarization memory effects in single-crystal CuFeO2, which has a magnetically induced ferroelectric phase at low temperatures and applied B fields between 7.5 and 13 T. Following electrical poling of the ferroelectric phase, we find that the nonpolar collinear antiferromagnetic ground state at B=0 T retains a strong memory of the polarization magnitude and direction, such that upon reentering the ferroelectric phase a net polarization of comparable magnitude to the initial pol...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Author's accepted manuscript

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Publisher copy:
10.1103/PhysRevB.94.144411

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Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Author
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Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
More by this author
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
More by this author
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
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Publisher:
American Physical Society Publisher's website
Journal:
Physical Review B Journal website
Issue:
14
Publication date:
2016-10-05
DOI:
EISSN:
2469-9969
ISSN:
2469-9950
Pubs id:
pubs:653404
URN:
uri:763e8d1e-e1d1-433c-9696-4edc87e7eb1b
UUID:
uuid:763e8d1e-e1d1-433c-9696-4edc87e7eb1b
Local pid:
pubs:653404

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