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GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

Publication status:: Published

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APA Style

Decoteau, M., Wilshaw, P., & Falster, R. (1991). GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS. 117, 231–234.

MLA Style

Decoteau, M., et al. GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS. 1991, pp. 231–34.

Chicago Style

Decoteau, M, P Wilshaw, and R Falster. 1991. “GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS.” In , 117:231–34.
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Authors

+ Decoteau, M More by this author

Role:: Author

+ Wilshaw, P More by this author

Role:: Author

+ Falster, R More by this author

Role:: Author

Journal:: MICROSCOPY OF SEMICONDUCTING MATERIALS 1991 More from this journal
Volume:: 117
Pages:: 231-234
Publication date:: 1991-01-01
Event title:: CONF ON MICROSCOPY OF SEMICONDUCTING MATERIALS
ISBN:: 0854984062

Pubs id:: pubs:22671
UUID:: uuid:7383ee3b-6f6d-4fce-8ef0-e54e67ac89c6
Local pid:: pubs:22671
Source identifiers:: 22671
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1991

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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