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Accuracy of single quantum dot registration using cryogenic laser photolithography

Abstract:: We have registered the position of single InGaAs quantum dots using a novel cryogenic laser photolithography technique. This would be useful in realizing solid state cavity quantum electrodynamics. By fabricating metal alignment markers around the quantum dot, it was registered with an accuracy of 50 nm. Following the marker fabrication process we demonstrated that the same quantum dot was reacquired, with an accuracy of 150 nm. The photoluminescence spectra from the quantum dots before and a...
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APA Style

Lee, K., Green, A., Taylor, R., Waldermann, F., Sena, A., Sharp, D., Turberfield, A., Brossard, F., & Williams, D. (2006). Accuracy of single quantum dot registration using cryogenic laser photolithography. 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, 2, 723–726.

MLA Style

Lee, K., et al. “Accuracy of Single Quantum Dot Registration Using Cryogenic Laser Photolithography.” 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, vol. 2, 2006, pp. 723–26.

Chicago Style

Lee, K, A Green, R Taylor, F Waldermann, A Sena, D Sharp, A Turberfield, F Brossard, and D Williams. 2006. “Accuracy of Single Quantum Dot Registration Using Cryogenic Laser Photolithography.” 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 2: 723–26.
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Bibliographic Details

Journal:: 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Volume:: 2
Pages:: 723-726
Publication date:: 2006-01-01

Item Description

Language:: English
Keywords:: Nanotechnology

Photoluminescence

Quantum effect semiconductor devices
Pubs id:: pubs:134844
UUID:: uuid:6eb9ec78-87c0-4aa2-945c-bfb8e34df3e5
Local pid:: pubs:134844
Source identifiers:: 134844
Deposit date:: 2013-11-16

Terms of use

Copyright date:: 2006

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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