Modelling charge storage near full well in CCDs

Conference item

The shape and size of the stored charge packet within a CCD pixel after exposure has implications for optimal device operation, susceptibility to radiation damage and modelling of dynamic charge collection effects such as the “Brighter-Fatter Effect”. Above the full well capacity, phenomena such as bleed trails and surface charge loss occur. In this paper we discuss why accurately reproducing saturation effects in simulations based on electrostatics is difficult, and present an approach to modelling the storage of charge in CCD pixels using commercial semiconductor simulation software. We suggest experimental measurements which can be connected to such modelling. Full well measurements on a thick, high resistivity back illuminated sensor (the e2v CCD261) are presented.

Authors: Weatherill, D; Plackett, R; Arndt, K; Shipsey, I

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: Institute of Physics
• Host title: Precision Astronomy with Fully Depleted CCDs
• Journal: Precision Astronomy with Fully Depleted CCDs
• Volume: 12
• Pages: C05008
• Publication date: 2017-05-01
• Acceptance date: 2017-05-02
• DOI: 10.1088/1748-0221/12/05/C05008
• Keywords: Detectors for UV, visible and IR photons; Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)