Journal article
In-situ observation of stacking fault evolution in vacuum-deposited C60
- Abstract:
- We report an in-situ study of stacking fault evolution in C 60 thin films using grazing-incidence x-ray scattering (GIXS). A Williamson-Hall analysis of the main scattering features during growth of a 15 nm film on glass indicate lattice strain as high as 6% in the first 5 nm of the film, with a decrease to 2% beyond 8 nm thickness. Deformation stacking faults along the {220} plane are found to occur with 68% probability, and closely linked to the formation of a nanocrystalline powder-like film. Our findings, which capture monolayer-resolution growth, are consistent with previous work on crystalline and powder C60 films and provide a crystallographic context for the realtime study of organic semiconductor thin films.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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(Preview, Version of record, pdf, 892.8KB, Terms of use)
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- Publisher copy:
- 10.1063/1.4995571
Authors
+ Wolfson College, Oxford
More from this funder
- Funding agency for:
- Martinez Hardigree, J
- Grant:
- Junior Research Fellowship
+ Science and Technology Facilities Council
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- Grant:
- ChallengeLed Applied Systems Programme (CLASP, ST/L003309/1
- Publisher:
- AIP Publishing
- Journal:
- Applied Physics Letters More from this journal
- Volume:
- 111
- Issue:
- 23
- Article number:
- 233305
- Publication date:
- 2017-12-08
- Acceptance date:
- 2017-11-13
- DOI:
- EISSN:
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1077-3118
- ISSN:
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0003-6951
- Keywords:
- Pubs id:
-
pubs:745686
- UUID:
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uuid:6e5d65db-3f5c-4dd2-998d-30985a3e7d72
- Local pid:
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pubs:745686
- Source identifiers:
-
745686
- Deposit date:
-
2017-11-14
Terms of use
- Copyright holder:
- Hardigree et al
- Copyright date:
- 2017
- Notes:
-
Copyright © 2017 Authors. All article content, except where otherwise noted, is
licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/1.4995571
- Licence:
- CC Attribution (CC BY)
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