Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Journal article

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85 e− to 386 e− and from 75 e− to 277 e− for the corresponding pixels.

Authors: Kanisauskas, K; Affolder, A; Arndt, K; Bates, R; Benoit, M

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: IOP Publishing
• Journal: Journal of Instrumentation
• Volume: 12
• Issue: 02
• Pages: P02010
• Publication date: 2017-02-15
• Acceptance date: 2017-02-01
• DOI: 10.1088/1748-0221/12/02/P02010
• EISSN: 1748-0221
• Keywords: Solid state detectors; Si microstrip and pad detectors; Radiation-hard detectors