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Modification of the van der Waals interaction at the Bi2Te3 and Ge(111) interface

Abstract:

We present a structural and density-functional theory study of the interface of the quasi-twin-free grown three-dimensional topological insulator Bi2Te3 on Ge(111). Aberration-corrected scanning transmission electron microscopy and electron energy-loss spectroscopy in combination with first-principles calculations show that the weak van der Waals adhesion between the Bi2Te3 quintuple layer and Ge can be overcome by forming an additional Te layer at their interface. The first-principles calcul...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1103/PhysRevMaterials.5.024203

Authors


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John Fell Fund More from this funder
Publisher:
American Physical Society Publisher's website
Journal:
Physical Review Materials Journal website
Volume:
5
Article number:
024203
Publication date:
2021-02-12
Acceptance date:
2021-01-28
DOI:
EISSN:
2475-9953
Language:
English
Keywords:
Pubs id:
1159017
Local pid:
pubs:1159017
Deposit date:
2021-01-28

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