Journal article
Modification of the van der Waals interaction at the Bi2Te3 and Ge(111) interface
- Abstract:
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We present a structural and density-functional theory study of the interface of the quasi-twin-free grown three-dimensional topological insulator Bi2Te3 on Ge(111). Aberration-corrected scanning transmission electron microscopy and electron energy-loss spectroscopy in combination with first-principles calculations show that the weak van der Waals adhesion between the Bi2Te3 quintuple layer and Ge can be overcome by forming an additional Te layer at their interface. The first-principles calcul...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
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(Version of record, 1.7MB)
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- Publisher copy:
- 10.1103/PhysRevMaterials.5.024203
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Authors
Funding
John Fell Fund
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Bibliographic Details
- Publisher:
- American Physical Society Publisher's website
- Journal:
- Physical Review Materials Journal website
- Volume:
- 5
- Article number:
- 024203
- Publication date:
- 2021-02-12
- Acceptance date:
- 2021-01-28
- DOI:
- EISSN:
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2475-9953
Item Description
- Language:
- English
- Keywords:
- Pubs id:
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1159017
- Local pid:
- pubs:1159017
- Deposit date:
- 2021-01-28
Terms of use
- Copyright holder:
- American Physical Society
- Copyright date:
- 2021
- Rights statement:
- © 2021 American Physical Society
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