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Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.

Abstract:

We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results are in good quantitative agreement with theoretical predictions from an atomistic tight-binding model. Furthermore, the increase of the overlap between the electron and hole wave functions due to the...

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Publication status:
Published

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Authors


Jarjour, AF More by this author
Oliver, RA More by this author
Tahraoui, A More by this author
Kappers, MJ More by this author
Humphreys, CJ More by this author
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Journal:
Physical review letters
Volume:
99
Issue:
19
Pages:
197403
Publication date:
2007-11-05
DOI:
EISSN:
1079-7114
ISSN:
0031-9007
URN:
uuid:68c930f9-4d4c-44ac-99c1-5ceb49bdcf68
Source identifiers:
21026
Local pid:
pubs:21026
Language:
English

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