Journal article
Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
- Abstract:
-
We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results are in good quantitative agreement with theoretical predictions from an atomistic tight-binding model. Furthermore, the increase of the overlap between the electron and hole wave functions due to the...
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- Publication status:
- Published
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- Publisher copy:
- 10.1103/physrevlett.99.197403
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Authors
Bibliographic Details
- Journal:
- Physical Review Letters
- Volume:
- 99
- Issue:
- 19
- Pages:
- 197403
- Publication date:
- 2007-11-01
- DOI:
- EISSN:
-
1079-7114
- ISSN:
-
0031-9007
- Source identifiers:
-
21026
Item Description
- Language:
- English
- Pubs id:
-
pubs:21026
- UUID:
-
uuid:68c930f9-4d4c-44ac-99c1-5ceb49bdcf68
- Local pid:
- pubs:21026
- Deposit date:
- 2012-12-19
Terms of use
- Copyright date:
- 2007
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