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Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

Abstract:

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowires and their influence on electron mobility and radiative efficiency are urgently required. Here, we investigate the electronic properties of n-type modulation doped GaAs/AlGaAs nanowires via optical pump terahertz (THz) probe spectroscopy and photoluminescence spe...

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Publication status:
Published
Peer review status:
Peer reviewed

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Files:
Publisher copy:
10.1039/C7NR00680B

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
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Engineering and Physical Sciences Research Council More from this funder
Publisher:
Royal Society of Chemistry Publisher's website
Journal:
Nanoscale Journal website
Volume:
9
Pages:
7839-7846
Publication date:
2017-05-17
Acceptance date:
2017-05-16
DOI:
EISSN:
2040-3372
ISSN:
2040-3364
Source identifiers:
695570
Pubs id:
pubs:695570
UUID:
uuid:6701e1f6-b5d7-4e1b-8571-851c10cb1395
Local pid:
pubs:695570
Deposit date:
2017-05-17

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