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Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

Abstract:

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowires and their influence on electron mobility and radiative efficiency are urgently required. Here, we investigate the electronic properties of n-type modulation doped GaAs/AlGaAs nanowires via optical pump terahertz (THz) probe spectroscopy and photoluminescence spe...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1039/C7NR00680B

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Department:
Oxford, MPLS, Physics
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Department:
Oxford, MPLS, Physics
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Department:
Oxford, MPLS, Physics
Conesa-Boj, S More by this author
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Department:
Oxford, MPLS, Physics
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Publisher:
Royal Society of Chemistry Publisher's website
Journal:
Nanoscale Journal website
Volume:
9
Pages:
7839-7846
Publication date:
2017-05-17
Acceptance date:
2017-05-16
DOI:
EISSN:
2040-3372
ISSN:
2040-3364
Pubs id:
pubs:695570
URN:
uri:6701e1f6-b5d7-4e1b-8571-851c10cb1395
UUID:
uuid:6701e1f6-b5d7-4e1b-8571-851c10cb1395
Local pid:
pubs:695570

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