- Abstract:
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Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowires and their influence on electron mobility and radiative efficiency are urgently required. Here, we investigate the electronic properties of n-type modulation doped GaAs/AlGaAs nanowires via optical pump terahertz (THz) probe spectroscopy and photoluminescence spe...
Expand abstract - Publication status:
- Published
- Peer review status:
- Peer reviewed
- Version:
- Publisher's version
- Files:
-
-
(pdf, 1.3mb)
-
- Publisher copy:
- 10.1039/C7NR00680B
-
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- Grant:
- *Grant Number Example*
- Publisher:
- Royal Society of Chemistry Publisher's website
- Journal:
- Nanoscale Journal website
- Volume:
- 9
- Pages:
- 7839-7846
- Publication date:
- 2017-05-17
- Acceptance date:
- 2017-05-16
- DOI:
- EISSN:
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2040-3372
- ISSN:
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2040-3364
- Pubs id:
-
pubs:695570
- URN:
-
uri:6701e1f6-b5d7-4e1b-8571-851c10cb1395
- UUID:
-
uuid:6701e1f6-b5d7-4e1b-8571-851c10cb1395
- Local pid:
- pubs:695570
- Copyright holder:
- © Boland, et al
- Copyright date:
- 2017
- Notes:
- This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material
Journal article
Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires
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+ Engineering and Physical Sciences Research Council
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