Thesis
Exploiting extrinsic passivation on thin film dielectrics for high efficiency solar cells
- Abstract:
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The development of high efficiency solar cells is critical for the expansion of solar power capacity across the world. A major limitation to achieving high efficiency is the recombination of electrons and holes at the silicon surface. A common method to reduce recombination is to deposit a dielectric thin film, such as SiO2 or SiNx, upon the silicon surface. This serves to chemically passivate the surface, while the dielectric’s intrinsic charge provides a surface ele...
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(Preview, Dissemination version, pdf, 59.5MB, Terms of use)
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Authors
Contributors
+ Bonilla, RS
- Institution:
- University of Oxford
- Division:
- MPLS
- Department:
- Materials
- Sub department:
- Materials
- Research group:
- Electronic and Interface Materials Laboratory
- Role:
- Supervisor
- ORCID:
- 0000-0002-5395-5850
+ Wilshaw, P
- Institution:
- University of Oxford
- Division:
- MPLS
- Department:
- Materials
- Sub department:
- Materials
- Research group:
- The Semiconductor and Silicon Photovoltaics group
- Role:
- Supervisor
- ORCID:
- 0000-0002-3864-6064
+ Engineering and Physical Sciences Research Council
More from this funder
- Funder identifier:
- http://dx.doi.org/10.13039/501100000266
- Funding agency for:
- Al-Dhahir, I
- Grant:
- EP/N509711/1
- DOI:
- Type of award:
- DPhil
- Level of award:
- Doctoral
- Awarding institution:
- University of Oxford
- Language:
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English
- Keywords:
- Subjects:
- Deposit date:
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2022-07-17
- ARK identifier:
Terms of use
- Copyright holder:
- Al-Dhahir, I
- Copyright date:
- 2021
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