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Thesis

Exploiting extrinsic passivation on thin film dielectrics for high efficiency solar cells

Abstract:

The development of high efficiency solar cells is critical for the expansion of solar power capacity across the world. A major limitation to achieving high efficiency is the recombination of electrons and holes at the silicon surface. A common method to reduce recombination is to deposit a dielectric thin film, such as SiO2 or SiNx, upon the silicon surface. This serves to chemically passivate the surface, while the dielectric’s intrinsic charge provides a surface ele...

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Division:
MPLS
Department:
Materials
Role:
Author

Contributors

Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Sub department:
Materials
Research group:
Electronic and Interface Materials Laboratory
Role:
Supervisor
ORCID:
0000-0002-5395-5850
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Sub department:
Materials
Research group:
The Semiconductor and Silicon Photovoltaics group
Role:
Supervisor
ORCID:
0000-0002-3864-6064


More from this funder
Funder identifier:
http://dx.doi.org/10.13039/501100000266
Funding agency for:
Al-Dhahir, I
Grant:
EP/N509711/1


Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford

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