Comparison of exciton-biexciton with bound exciton-biexciton dynamics in GaN: Quantum beats and temperature dependence of the acoustic-phonon interaction

Conference item

The polarization dependence of biexcitonic signals and quantum beats between A-excitons (X-A) and A-biexcitons (XAXA) in a high-quality GaN epilayer is measured by spectrally-resolved and time-integrated four-wave mixing. With cross-linear polarised light, mixed beats with two periods are observed: the first beating period corresponds to the energy splitting between X-A and XAXA, and agrees well with the calculated XAXA binding energy, while the second beating period corresponds to that between X-A and donor bound excitons ((DX)-X-0). The temperature-dependent homogeneous linewidth shows that the (DX)-X-0 has a larger acoustic phonon coupling coefficient than the XAXA. We also measured the polarization dependent B-biexciton (XBXB) signal. The effective masses for the A- and B-hole were deduced from the binding energy.

Authors: Kyhm, K; Taylor, R; Ryan, J; Aoki, T; Kuwata-Gonokami, M

• Publication status: Published
• Journal: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
• Volume: 228
• Issue: 2
• Pages: 475-479
• Publication date: 2001-11-01
• Event title: 4th International Conference on Nitride Semiconductors (ICNS-4)
• DOI: 10.1002/1521-3951(200111)228:2<475::AID-PSSB475>3.0.CO;2-6
• EISSN: 1521-3951
• ISSN: 0370-1972
• Keywords: transient