Crack-free and conductive Si-doped AlN/GaN distributed Bragg reflectors grown on 6H-SiC(0001)

Journal article

The Si-doped n-type AIN/GaN distributed bragg reflectors grown on 6H-SiC(0001) were discussed. It was observed that the structures were crack-free and have a stopband centered around 450 nm with a full width at half maximum between 40 and 50 nm. It was also observed that the maximum measured reflectance was ≥99%. It was found that the vertical conductance measurements at room temperature on the samples shown on ohmic I-V behavior in the entire measurement range.

Authors: Ive, T; Brandt, O; Kostial, H; Hesjedal, T; Ramsteiner, M

• Publication status: Published
• Journal: APPLIED PHYSICS LETTERS
• Volume: 85
• Issue: 11
• Pages: 1970-1972
• Publication date: 2004-09-13
• DOI: 10.1063/1.1791738
• ISSN: 0003-6951
• Language: English