Probing the bonding in nitrogen-doped graphene using electron energy loss spectroscopy.

Journal article

Precise control of graphene properties is an essential step toward the realization of future graphene devices. Defects, such as individual nitrogen atoms, can strongly influence the electronic structure of graphene. Therefore, state-of-the-art characterization techniques, in conjunction with modern modeling tools, are necessary to identify these defects and fully understand the synthesized material. We have directly visualized individual substitutional nitrogen dopant atoms in graphene using scanning transmission electron microscopy and conducted complementary electron energy loss spectroscopy experiments and modeling which demonstrates the influence of the nitrogen atom on the carbon K-edge.

Authors: Nicholls, R; Murdock, A; Tsang, J; Britton, J; Pennycook, T

• Publication status: Published
• Journal: ACS nano
• Volume: 7
• Issue: 8
• Pages: 7145-7150
• Publication date: 2013-08-01
• DOI: 10.1021/nn402489v
• EISSN: 1936-086X
• ISSN: 1936-0851
• Language: English
• Keywords: nitrogen doping; STEM; modeling; CVD graphene; N-doped; EELS