Conference item
THz modulators and detectors based on semiconductor nanowires
- Abstract:
- Semiconductors nanowires have to potential to be building blocks for future nano-optoelectronic devices. We have recently demonstrated high performance THz photonic devices based on GaAs and InP nanowires. These include ultrafast optically switched modulators of THz radiation and single nanowire photoconductive detectors of THz pulses.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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Access Document
- Files:
-
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(Preview, Accepted manuscript, pdf, 207.3KB, Terms of use)
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- Publisher copy:
- 10.1109/IRMMW-THz.2017.8066874
Authors
- Publisher:
- IEEE
- Host title:
- 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
- Journal:
- 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) More from this journal
- Publication date:
- 2017-10-16
- Acceptance date:
- 2017-05-12
- DOI:
- ISSN:
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2162-2035, 2162-2027
- ISBN:
- 9781509060481
- Pubs id:
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pubs:809854
- UUID:
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uuid:5f2b475b-5469-49d3-a8b8-a57d9704c83a
- Local pid:
-
pubs:809854
- Source identifiers:
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809854
- Deposit date:
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2018-08-02
- ARK identifier:
Terms of use
- Copyright holder:
- IEEE
- Copyright date:
- 2017
- Notes:
- Copyright © 2017 IEEE. This is the accepted manuscript version of the article. The final version is available online from IEEE at: https://doi.org/10.1109/IRMMW-THz.2017.8066874
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