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Comparing the performance of 850 GHz integrated bias-tee superconductor-insulator-superconductor (SIS) mixers with single- and parallel-junction tuner

Abstract:
We present and compare the design and performance of two 850 GHz radial probe fed superconductor-insulator-superconductor mixers, where the antenna is aligned perpendicular to the E-Plane of the input full-height rectangular waveguide connected to a multiple flare-angles smooth-walled horn. Both designs are comprised of 0.5 µm2 hybrid niobium/aluminium-nitride/niobium-nitride tunnel junction, fabricated on top of a niobium titanium nitride ground plane with an Al wiring layer. The entire superconducting circuit is supported with a 40 µm thick quartz substrate. The major difference between the two designs is the method used to cancel out the parasitic junction capacitance for broadband performance. The first design utilises two identical junctions connected in parallel with a short transmission line to convert the capacitance of one junction into the equivalent inductance of the other junction, commonly known as the twin-junction tuning scheme; whilst the second design employs an end-loaded scheme with only one tunnel junction. We found that both methods offer similar radio frequency performances, with close to 2× the double sideband quantum noise temperature, but the twin-junction design is more resilient to fabrication tolerances. However, the end-loaded design offers a much better intermediate frequency (IF) bandwidth performance, made possible by the sub-micron and high current density tunnel junction technology. The improved IF performance is important for many millimetre (mm) and sub-mm observatories, such as future upgrades of Atacama Large Millimetre/sub-mm Array receivers, as well as forthcoming space-borne far-infrared missions. Therefore, we conclude that the single-junction mixer design is the preferred option for THz applications, as long as the fabrication error can be minimised within a certain limit
Publication status:
Published
Peer review status:
Peer reviewed

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Institution:
University of Oxford
Role:
Author
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Role:
Author
ORCID:
0000-0003-1041-1017
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Role:
Author
ORCID:
0000-0002-1563-1257
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Author
ORCID:
0000-0002-8070-917X
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Role:
Author
ORCID:
0000-0003-1319-0440


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Funder identifier:
https://ror.org/02mh1ke95
Grant:
19-52-80023
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Funder identifier:
10.13039/501100000780
Grant:
730562
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Funder identifier:
10.13039/501100000271
Grant:
ST/R00062X/1


Publisher:
IOP Publishing
Journal:
Superconductor Science and Technology More from this journal
Volume:
35
Issue:
12
Pages:
125008-125008
Publication date:
2022-11-07
DOI:
EISSN:
1361-6668
ISSN:
0953-2048


Language:
English
Keywords:
Pubs id:
1310953
Local pid:
pubs:1310953
Source identifiers:
W4308325057
Deposit date:
2026-04-30
ARK identifier:
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