Conference item

Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study

Abstract:: Heteroepitaxial growth of InN on GaN(0001) and on Si(111) has been studied using scanning tunnelling microscopy (STM) and atomic force microscopy (AIM) in order to elucidate the growth modes. InN/GaN grows in a 2D mode, despite the fact that there is an 11.2% lattice mismatch. When we grow InN on Si(111), we again observe 2D growth, with small islands of varying size. Surface reconstructions on the islands have been observed with atomic resolution. We observe different behaviour when we grow InN/GaN in the presence of silicon, which leads to a bimodal distribution of 3D islands.

Publication status:: Published

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APA Style

Norenberg, C., Martin, M. G., Oliver, R., Castell, M., & Briggs, G. (2001). Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study. 169, 539–542.

MLA Style

Norenberg, C., et al. Heteroepitaxial Growth of InN Islands on GaN(0001) and Si(111): a Combined STM/AFM Study. no. 169, 2001, pp. 539–42.

Chicago Style

Norenberg, C, MG Martin, R Oliver, M Castell, and G Briggs. 2001. “Heteroepitaxial Growth of InN Islands on GaN(0001) and Si(111): a Combined STM/AFM Study.” In , 539–42.
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Authors

+ Norenberg, C More by this author

Role:: Author

+ Martin, MG More by this author

Role:: Author

+ Oliver, R More by this author

Role:: Author

+ Castell, M More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Materials
Role:: Author

+ Briggs, G More by this author

Role:: Author

Journal:: MICROSCOPY OF SEMICONDUCTING MATERIALS 2001 More from this journal
Issue:: 169
Pages:: 539-542
Publication date:: 2001-01-01
Event title:: Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
ISSN:: 0951-3248
ISBN:: 0750308184

Keywords:: DOTS
Pubs id:: pubs:16856
UUID:: uuid:5c242190-d72a-4ef1-b3ec-91d3c8086a3b
Local pid:: pubs:16856
Source identifiers:: 16856
Deposit date:: 2012-12-19

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Copyright date:: 2001

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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