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High photoresponsivity in ultrathin 2D lateral graphene:WS2:graphene photodetectors using direct CVD growth

Abstract:

We show that reducing the degree of van der Waals overlapping in all 2D ultrathin lateral devices composed of graphene:WS2:graphene leads to significant increase in photodetector responsivity. This is achieved by directly growing WS2 using chemical vapor deposition (CVD) in prepatterned graphene gaps to create epitaxial interfaces. Direct-CVD-grown graphene:WS2:graphene lateral photodetecting transistors exhibit high photoresponsivities reaching 121 A/W under 2.7 × 105 mW/cm2 532 nm illuminat...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1021/acsami.8b20321

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Role:
Author
ORCID:
0000-0001-6333-7856
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Role:
Author
ORCID:
0000-0003-3067-9520
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Role:
Author
ORCID:
0000-0001-8215-9469
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Publisher:
American Chemical Society Publisher's website
Journal:
ACS Applied Materials and Interfaces Journal website
Volume:
11
Issue:
6
Pages:
6421-6430
Publication date:
2019-01-31
Acceptance date:
2019-01-14
DOI:
EISSN:
1944-8252
ISSN:
1944-8244
Pubs id:
pubs:967937
URN:
uri:5bf13cb2-d7e8-432a-b3cf-f0dca2eda32a
UUID:
uuid:5bf13cb2-d7e8-432a-b3cf-f0dca2eda32a
Local pid:
pubs:967937
Language:
English
Keywords:

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