- Abstract:
-
We show that reducing the degree of van der Waals overlapping in all 2D ultrathin lateral devices composed of graphene:WS2:graphene leads to significant increase in photodetector responsivity. This is achieved by directly growing WS2 using chemical vapor deposition (CVD) in prepatterned graphene gaps to create epitaxial interfaces. Direct-CVD-grown graphene:WS2:graphene lateral photodetecting transistors exhibit high photoresponsivities reaching 121 A/W under 2.7 × 105 mW/cm2 532 nm illuminat...
Expand abstract - Publication status:
- Published
- Peer review status:
- Peer reviewed
- Publisher:
- American Chemical Society Publisher's website
- Journal:
- ACS Applied Materials and Interfaces Journal website
- Volume:
- 11
- Issue:
- 6
- Pages:
- 6421-6430
- Publication date:
- 2019-01-31
- Acceptance date:
- 2019-01-14
- DOI:
- EISSN:
-
1944-8252
- ISSN:
-
1944-8244
- Pubs id:
-
pubs:967937
- URN:
-
uri:5bf13cb2-d7e8-432a-b3cf-f0dca2eda32a
- UUID:
-
uuid:5bf13cb2-d7e8-432a-b3cf-f0dca2eda32a
- Local pid:
- pubs:967937
- Language:
- English
- Keywords:
- Copyright date:
- 2019
Journal article
High photoresponsivity in ultrathin 2D lateral graphene:WS2:graphene photodetectors using direct CVD growth
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