Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

Journal article

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B pp = 12 μT) and long spin coherence times (T 2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon. © 2012 American Institute of Physics.

Authors: Weis, C; Lo, C; Lang, V; Tyryshkin, A; George, R

• Publication status: Published
• Journal: APPLIED PHYSICS LETTERS
• Volume: 100
• Issue: 17
• Pages: 172104-172104
• Publication date: 2012-04-23
• DOI: 10.1063/1.4704561
• ISSN: 0003-6951
• Language: English