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Temperature-dependent fine structure splitting in InGaN quantum dots

Abstract:

We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. At 5 K, a statistical average splitting of 443 ± 132 μeV has been found based on 81 quantum dots. The degree of fine structure splitting stays relatively constant for temperatures less than 100 K and only increases above that temperature. At 200 K, we find that the fine struc...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1063/1.4996861

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Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Author
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Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Author
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/Engineering and Physical Sciences Research Council (EPSRC) More from this funder
Publisher:
AIP Publishing Publisher's website
Journal:
Applied Physics Letters Journal website
Volume:
111
Issue:
5
Pages:
Article: 053101
Publication date:
2017-08-01
DOI:
EISSN:
1077-3118
ISSN:
0003-6951
Pubs id:
pubs:722559
URN:
uri:566c852e-9f8a-4fd5-ac8f-05f335498472
UUID:
uuid:566c852e-9f8a-4fd5-ac8f-05f335498472
Local pid:
pubs:722559
Paper number:
5

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