High current gain silicon-based spin transistor

Journal article

A silicon-based spin transistor of novel operating principle has been demonstrated in which the current gain at room temperature is 1.4 (n-type) and 0.97 (p-type). This high current gain was obtained from a hybrid metal/semiconductor analogue to the bipolar junction transistor which functions by tunnel-injecting carriers from a ferromagnetic emitter into a diffusion driven silicon base and then tunnel-collecting them via a ferromagnetic collector. The switching of the magnetic state of the collector ferromagnet controls the collector efficiency and the current gain. Furthermore, the magnetocurrent, which is determined to be 98% (140%) for p-type (n-type) in -110 Oe, is attributable to the spin-polarized base diffusion current.

Authors: Dennis, C; Sirisathitkul, C; Ensell, G; Gregg, J; Thompson, S

• Publication status: Published
• Journal: JOURNAL OF PHYSICS D-APPLIED PHYSICS
• Volume: 36
• Issue: 2
• Pages: 81-87
• Publication date: 2003-01-21
• DOI: 10.1088/0022-3727/36/2/303
• ISSN: 0022-3727
• Language: English