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Accuracy of pulsed laser atom probe tomography for compound semiconductor analysis

Abstract:

Atom probe tomography has recently experienced a renaissance, strongly promoted by the revival of pulsed laser atom probe. The technique is now widely employed to study semiconductor materials at the nanometre level. This paper summarises some aspects of the accuracy of pulsed laser atom probe relevant to semiconductor applications. It is shown that laser pulsing can reduce the lateral resolution due to thermally stimulated surface migration. Moreover, the commonly observed cluster ions can u...

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Publication status:
Published

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Authors


Mueller, M More by this author
Smith, GDW More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Volume:
326
Issue:
1
Pages:
012031-012031
Publication date:
2011
DOI:
EISSN:
1742-6596
ISSN:
1742-6588
URN:
uuid:52c063b6-5e13-4b9b-aef1-450169307559
Source identifiers:
246061
Local pid:
pubs:246061

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