Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)

Journal article

It is well established that the growth of Ge on Si(001) proceeds by Stranski-Krastanov mode, i.e. 3D islands ("hut" and macroscopic clusters) nucleate on top of a 3-4 ML thick pseudomorphic layer. Here, we present in-situ intrinsic stress measurements of Ge/Si(001) up to the film thicknesses at which the 3D islands percolate. From the film stress - and supported by AFM investigations - three stages of film growth characterised by different reliefs of the misfit strain can be discriminated: (1) the pseudomorphic layer-by-layer stage, (2) nucleation and growth and (3) coalescence of 3D islands. © 1998 Elsevier Science B.V. All rights reserved.

Authors: Wedler, G; Walt, J; Hesjedal, T; Chilla, E; Koch, R

• Publication status: Published
• Journal: SURFACE SCIENCE
• Volume: 402
• Issue: 1-3
• Pages: 290-294
• Publication date: 1998-05-15
• DOI: 10.1016/S0039-6028(97)01037-6
• ISSN: 0039-6028
• Language: English
• Keywords: intrinsic stress; germanium; atomic force microscopy; silicon; epitaxy; semiconducting films