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Low-voltage solution-processed hybrid light-emitting transistors

Abstract:

We report the development of low operating voltages in inorganic–organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer “Super Yellow” acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ra...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted Manuscript

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Publisher copy:
10.1021/acsami.8b06031

Authors


Chaudhry, MU More by this author
Tetzner, K More by this author
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Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics; Condensed Matter Physics
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Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics; Condensed Matter Physics
Pearson, C More by this author
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Funding agency for:
Lin, YH
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Grant:
Durham Junior Research Fellowship (grant agreement no. 609412)
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Grant:
Durham Junior Research Fellowship (grant agreement no. 609412)
Publisher:
American Chemical Society Publisher's website
Journal:
ACS Applied Materials and Interfaces Journal website
Volume:
10
Issue:
22
Pages:
18445–18449
Publication date:
2018-05-16
Acceptance date:
2018-05-16
DOI:
ISSN:
1944-8244
Pubs id:
pubs:853905
URN:
uri:4fedc061-5bfc-429f-b6cf-544e38fa16a1
UUID:
uuid:4fedc061-5bfc-429f-b6cf-544e38fa16a1
Local pid:
pubs:853905

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