Van der Waals Integration of 1D Nb 2 Pd 3 Se 8 and 2D WSe 2 for Gate‐Tunable In‐Sensor Image Processing

Journal article

1D and 2D integrations provide significant promise for machine vision by enabling compact, power‐efficient optoelectronic devices. However, the potential of 1D materials in mixed‐dimensional structures for convolutional image processing remains largely unexplored. Here, high‐quality 1D‐Nb2Pd3Se8 is synthesized and integrated with 2D‐WSe2 to form self‐powered photodetectors, exhibiting gate‐tunable bi‐directional photoresponse for image processing. Utilizing the narrow band gap and favorable work function of 1D‐Nb2Pd3Se8, a type‐I junction and 1D van der Waals interface are established with transition metal dichalcogenides. The gate tunable built‐in electric field enables switching between n‐p and n‐n+ configurations, allowing the drift photocurrent direction to be reversed, achieving both negative and positive photocurrent. Furthermore, efficient conversion of high‐energy photons along one dimension enhances sensitivity at 375 nm. The device achieves a responsivity of 232 mA W−1, external quantum efficiency of 77% at 375 nm illumination, rapid response time of ~3 µs, detectivity of 6.35 × 1010 Jones, and broadband photodetection from ultraviolet to near‐infrared. The demonstrated gate‐controllable, bi‐directional photoresponse with linear power dependence in a 1D heterojunction offers a promising platform for in‐sensor convolutional processing with high integration and portability.

Authors: Dat, VK; Nguyen, MC; Jeong, BJ; Duong, NT; Do, VD

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: Wiley
• Journal: Advanced Materials
• Article number: e00011
• Publication date: 2025-08-13
• DOI: 10.1002/adma.202500011
• EISSN: 1521-4095
• ISSN: 0935-9648
• Language: English
• Keywords: vdW heterostructure‐based in‐sensor computing; broadband photodetection; 1D vdW heterostructure; convolution image processing; gate‐tunable bi‐directional photoresponse