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DISLOCATION-RELATED DEEP LEVELS IN GAAS - AN OPTICAL-ABSORPTION STUDY

Publication status:: Published

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APA Style

Vignaud, D., & Farvacque, J. (1989). DISLOCATION-RELATED DEEP LEVELS IN GAAS - AN OPTICAL-ABSORPTION STUDY. 104, 203–203.

MLA Style

Vignaud, D., and J. Farvacque. DISLOCATION-RELATED DEEP LEVELS IN GAAS - AN OPTICAL-ABSORPTION STUDY. 1989, pp. 203–03.

Chicago Style

Vignaud, D, and J Farvacque. 1989. “DISLOCATION-RELATED DEEP LEVELS IN GAAS - AN OPTICAL-ABSORPTION STUDY.” In , 104:203–.
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Authors

+ Vignaud, D More by this author

Role:: Author

+ Farvacque, J More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 203-203
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Pubs id:: pubs:14121
UUID:: uuid:4dbc8d38-cd3e-4a80-afe8-8f2abce34330
Local pid:: pubs:14121
Source identifiers:: 14121
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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