Magneto-reflectivity of gallium nitride epilayers

Conference item

We have used interband magneto-reflectivity to study the band parameters of wurtzite GaN epilayers grown on sapphire. Using magnetic fields up to 57 T, we have observed a series of up to ten magneto-excitonic transitions for the first time. The levels can be fitted with two intersecting magneto-excitonic fans coming from the A and B valence band edges with reduced masses of (0.195 +/- 0.01) m(0) and (0.180 +/- 0.003) m(0) respectively. The field dependence of the A-exciton 1s and 2p states gives a reduced mass of (0.180 +/- 0.005) m(0), and (0.193 +/- 0.005) m(0) is found with the B-exciton 1s state. The B exciton shows a clear spin splitting at 57 T, whereas no splitting of the A exciton is observed.

Authors: Shields, P; Nicholas, R; Beaumont, B; Gibart, P

• Publication status: Published
• Journal: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
• Volume: 216
• Issue: 1
• Pages: 17-20
• Publication date: 1999-11-01
• Event title: 3rd International Conference on Nitride Semiconductors (ICNS 99)
• DOI: 10.1002/(SICI)1521-3951(199911)216:1<17::AID-PSSB17>3.0.CO;2-V
• ISSN: 0370-1972
• Keywords: GaN