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Atomic layer deposited electron transport Layers in efficient organometallic halide perovskite devices

Abstract:

Amorphous TiO2 and SnO2 electron transport layers (ETLs) were deposited by low-temperature atomic layer deposition (ALD). Surface morphology and x-ray photoelectron spectroscopy (XPS) indicate uniform and pinhole free coverage of these ALD hole blocking layers. Both mesoporous and planar perovskite solar cells were fabricated based on these thin films with aperture areas of 1.04 cm2 for TiO2 and 0.09 cm2 and 0.70 cm2 for SnO2. The resulting cell performance of 18.3 % power conversion efficien...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1557/adv.2018.515

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Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics
Subgroup:
Condensed Matter Physics
Role:
Author
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Publisher:
Cambridge University Press Publisher's website
Volume:
3
Issue:
51
Pages:
3075-3084
Publication date:
2018-07-03
Acceptance date:
2018-07-03
DOI:
EISSN:
2059-8521
Pubs id:
pubs:934885
URN:
uri:48dc8dfd-442a-4a7c-a2a1-52d957ee46a8
UUID:
uuid:48dc8dfd-442a-4a7c-a2a1-52d957ee46a8
Local pid:
pubs:934885

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