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Controlling energy levels and Fermi level en route to fully tailored energetics in organic semiconductors

Abstract:
Simultaneous control over both the energy levels and Fermi level, a key breakthrough for inorganic electronics, has yet to be shown for organic semiconductors. Here, energy level tuning and molecular doping are combined to demonstrate controlled shifts in ionisation potential and Fermi level of an organic thin film. This is achieved by p-doping a blend of two host molecules, zinc phthalocyanine and its eight-times fluorinated derivative, with tunable energy levels based on mixing ratio. The doping efficiency is found to depend on host mixing ratio, which is explained using a statistical model that includes both shifts of the host's ionisation potentials and, importantly, the electron affinity of the dopant. Therefore, the energy level tuning effect has a crucial impact on the molecular doping process. The practice of comparing host and dopant energy levels must consider the long-range electrostatic shifts to consistently explain the doping mechanism in organic semiconductors.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1038/s41467-019-13563-x

Authors


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Role:
Author
ORCID:
0000-0002-9093-8347
More by this author
Role:
Author
ORCID:
0000-0003-3887-3395


Publisher:
Nature Research
Journal:
Nature Communications More from this journal
Volume:
10
Issue:
1
Article number:
5538
Publication date:
2019-12-05
Acceptance date:
2019-11-12
DOI:
ISSN:
2041-1723
Pmid:
31804495


Language:
English
Pubs id:
pubs:1077272
UUID:
uuid:47cd6565-3e93-4604-bb53-5b3a6c4fba93
Local pid:
pubs:1077272
Source identifiers:
1077272
Deposit date:
2019-12-18

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