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Defects in hexagonal boron nitride for quantum technologies: a perspective

Abstract:
Atomic defects in solid-state materials are building blocks for future quantum technologies, such as quantum communication networks, computers, and sensors. Until recently, a handful of defects in a small selection of host materials have been possible candidates. Recent developments have revealed that hexagonal boron nitride, a wide-bandgap two-dimensional material, hosts single-photon-emitting atomic defects with access to optically addressable electronic and nuclear spins at room temperature. Now, atomically thin quantum devices that operate at ambient conditions are a possibility. In this perspective, we discuss the recent progress, and challenges, in understanding the fundamental photophysics of defects in hBN, as well as specific opportunities they present for the development of quantum technologies.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1088/2053-1583/ae566e

Authors

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Role:
Author
ORCID:
0000-0002-0993-0648
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Role:
Author
ORCID:
0000-0003-0111-5101
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Role:
Author
ORCID:
0000-0002-2650-0842
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Institution:
University of Oxford
Division:
SSD
Department:
International Development
Sub department:
Refugee Studies Centre
Role:
Author
ORCID:
0000-0001-6516-4805


Publisher:
IOP Publishing
Journal:
2D Materials More from this journal
Volume:
13
Issue:
2
Pages:
023001
Article number:
023001
Publication date:
2026-04-27
Acceptance date:
2026-03-24
DOI:
EISSN:
2053-1583
ISSN:
2053-1583


Language:
English
Keywords:
Pubs id:
2401047
Local pid:
pubs:2401047
Source identifiers:
3988451
Deposit date:
2026-04-27
ARK identifier:
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