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Electron-beam-induced activity of defects in silicon

Abstract:
The results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. This effect is termed electron-beam-induced activity (EBIA). An analysis of the EBIC technique for studying transition metal impurities is given and the EBIA of Fe-contaminated silicon is shown to be due to recombination-enhanced dissociation of FeB pairs.

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author


Publisher:
Elsevier
Journal:
Materials science and engineering. B, Solid-state materials for advanced technology More from this journal
Volume:
B24
Issue:
1-3
Pages:
8-14
Publication date:
1994-05-01
ISSN:
0921-5107


Language:
English
Pubs id:
pubs:502439
UUID:
uuid:434f9554-735a-4fa9-8ebe-ba46a1198577
Local pid:
pubs:502439
Source identifiers:
502439
Deposit date:
2015-01-15
ARK identifier:

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