Journal article
Electron-beam-induced activity of defects in silicon
- Abstract:
- The results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. This effect is termed electron-beam-induced activity (EBIA). An analysis of the EBIC technique for studying transition metal impurities is given and the EBIA of Fe-contaminated silicon is shown to be due to recombination-enhanced dissociation of FeB pairs.
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Authors
- Publisher:
- Elsevier
- Journal:
- Materials science and engineering. B, Solid-state materials for advanced technology More from this journal
- Volume:
- B24
- Issue:
- 1-3
- Pages:
- 8-14
- Publication date:
- 1994-05-01
- ISSN:
-
0921-5107
- Language:
-
English
- Pubs id:
-
pubs:502439
- UUID:
-
uuid:434f9554-735a-4fa9-8ebe-ba46a1198577
- Local pid:
-
pubs:502439
- Source identifiers:
-
502439
- Deposit date:
-
2015-01-15
- ARK identifier:
Terms of use
- Copyright date:
- 1994
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