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Phase space for the breakdown of the quantum Hall effect in epitaxial graphene.

Abstract:

We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (I(c)) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (ρ(xx)=0) shows a [1-(T/T(c))2] dependence and persists up to T(c)>45  K at 29 T. With magnetic field I(c) was found to increase ∝...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford
Role:
Author
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Journal:
Physical review letters
Volume:
111
Issue:
9
Pages:
096601
Publication date:
2013-08-05
DOI:
EISSN:
1079-7114
ISSN:
0031-9007
URN:
uuid:42d62175-6608-4e44-b89d-f51474b14206
Source identifiers:
429118
Local pid:
pubs:429118
Language:
English

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