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Atomistic models of the Si(100)-SiO(2) interface: structural, electronic and dielectric properties

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APA Style

Giustino, F., Bongiorno, A., & Pasquarello, A. (2005). Atomistic models of the Si(100)-SiO(2) interface: structural, electronic and dielectric properties. JOURNAL OF PHYSICS-CONDENSED MATTER, 17(21), S2065–S2074.

MLA Style

Giustino, F., et al. “Atomistic Models of the Si(100)-SiO(2) Interface: Structural, Electronic and Dielectric Properties.” JOURNAL OF PHYSICS-CONDENSED MATTER, vol. 17, no. 21, 2005, pp. S2065–S2074.

Chicago Style

Giustino, F, A Bongiorno, and A Pasquarello. 2005. “Atomistic Models of the Si(100)-SiO(2) Interface: Structural, Electronic and Dielectric Properties.” JOURNAL OF PHYSICS-CONDENSED MATTER 17 (21): S2065–S2074.
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Publisher copy:: 10.1088/0953-8984/17/21/003

Authors

+ Giustino, F More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Materials
Role:: Author

+ Bongiorno, A More by this author

Role:: Author

+ Pasquarello, A More by this author

Role:: Author

Journal:: JOURNAL OF PHYSICS-CONDENSED MATTER More from this journal
Volume:: 17
Issue:: 21
Pages:: S2065-S2074
Publication date:: 2005-06-01
DOI:: 10.1088/0953-8984/17/21/003
EISSN:: 1361-648X
ISSN:: 0953-8984

Pubs id:: pubs:172993
UUID:: uuid:3f5d228f-1321-4200-9377-3b6e62593133
Local pid:: pubs:172993
Source identifiers:: 172993
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 2005

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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