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Atomic level structural and chemical analysis of Cr-doped Bi₂Se₃

Abstract:
We present a study of the structure and chemical composition of the Cr-doped 3D topological insulator Bi2Se3. Single-crystalline thin films were grown by molecular beam epitaxy on Al2O3 (0001), and their structural and chemical properties determined on an atomic level by aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy. A regular quintuple layer stacking of the Bi2Se3 film is found, with the exception of the first several atomic layers in the initial growth. The spectroscopy data give direct evidence that Cr is preferentially substituting for Bi in the Bi2Se3 host. We also show that Cr has a tendency to segregate at internal grain boundaries of the Bi2Se3 film.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1038/srep26549

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More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author



Publisher:
Nature Publishing Group
Journal:
Scientific Reports More from this journal
Volume:
6
Article number:
26549
Publication date:
2016-01-01
Acceptance date:
2016-05-04
DOI:
ISSN:
2045-2322


Pubs id:
pubs:619292
UUID:
uuid:3eea349a-9b98-49b9-a27d-6201624a824c
Local pid:
pubs:619292
Source identifiers:
619292
Deposit date:
2016-05-04

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