MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM

Conference item

Self-assembled Sb-based quantum dots (QDs) were grown by metal-organic vapour phase epitaxy and assessed by means of atomic force microscopy, transmission electron microscopy and photoluminescence. Two series of InSb QDs in a GaSb matrix were grown at 490 +/- 10 degrees C and luminesced in the mid-infrared at about 1.7 mu m. Reductions in the III/V ratio and growth rate as used for the second series resulted in a change of the morphology of the InSb islands from hillocks without facets and a low level of order, to dumbbell shaped islands with distinct facets and a higher level of order. Self-assembled GaSb islands were grown on GaAs at 550 degrees C and assessed for comparison by means of AFM.

Authors: Mock, P; Booker, G; Mason, N; Alphandery, E; Nicholas, R

• Publication status: Published
• Journal: IEE PROCEEDINGS-OPTOELECTRONICS
• Volume: 147
• Issue: 3
• Pages: 209-215
• Publication date: 2000-06-01
• Event title: 3rd International Conference on Mid-IR Optoelectronics - Materials and Devices (MIOMD 99)
• DOI: 10.1049/ip-opt:20000615
• EISSN: 1359-7078
• ISSN: 1350-2433
• Keywords: INAS ISLANDS; PHOTOLUMINESCENCE; INSB; LIMITING GROWTH; COHERENT ISLANDS; ATOMIC-FORCE MICROSCOPY; MOLECULAR-BEAM EPITAXY; GASB; HETEROSTRUCTURES; STRAINED-LAYER SUPERLATTICES