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MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM

Abstract:

Self-assembled Sb-based quantum dots (QDs) were grown by metal-organic vapour phase epitaxy and assessed by means of atomic force microscopy, transmission electron microscopy and photoluminescence. Two series of InSb QDs in a GaSb matrix were grown at 490 +/- 10 degrees C and luminesced in the mid-infrared at about 1.7 mu m. Reductions in the III/V ratio and growth rate as used for the second series resulted in a change of the morphology of the InSb islands from hillocks without facets and a ...

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Publication status:
Published

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Publisher copy:
10.1049/ip-opt:20000615

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
IEE PROCEEDINGS-OPTOELECTRONICS
Volume:
147
Issue:
3
Pages:
209-215
Publication date:
2000-06-01
Event title:
3rd International Conference on Mid-IR Optoelectronics - Materials and Devices (MIOMD 99)
DOI:
EISSN:
1359-7078
ISSN:
1350-2433
Source identifiers:
14501
Keywords:
Pubs id:
pubs:14501
UUID:
uuid:3b44c170-ae9f-4263-9c08-667eedc31b2e
Local pid:
pubs:14501
Deposit date:
2012-12-19

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