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EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS - A MICROSCOPIC MECHANISM

Publication status:: Published

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APA Style

Maeda, N., & Takeuchi, S. (1989). EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS - A MICROSCOPIC MECHANISM. 104, 303–308.

MLA Style

Maeda, N., and S. Takeuchi. EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS - A MICROSCOPIC MECHANISM. 1989, pp. 303–08.

Chicago Style

Maeda, N, and S Takeuchi. 1989. “EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS - A MICROSCOPIC MECHANISM.” In , 104:303–8.
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Authors

+ Maeda, N More by this author

Role:: Author

+ Takeuchi, S More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 303-308
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Keywords:: INSITU

recombination

DEFECT REACTIONS

SINGLE-CRYSTALS

SILICON

GLIDE
Pubs id:: pubs:25684
UUID:: uuid:3a25e55c-0392-4c18-8b64-d7f11c8657b6
Local pid:: pubs:25684
Source identifiers:: 25684
Deposit date:: 2012-12-19

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Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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