The surface chemistry and interface engineering of lead sulphide colloidal quantum dots for photovoltaic applications

Thesis

This thesis examines the effect of lead sulphide (PbS) CQDs’ surface chemistry and interfaces to their photovoltaic performance.

Using PbS CQDs as the starting material, cation-exchange was utilised to form PbS/CdS core/shell CQDs, which were thoroughly characterised and the improved surface passivation was shown by increased photoluminescence yield and lifetime. The core/shell CQDs were incorporated into a ZnO/CQD heterojunction solar cell device and showed a substantial improvement of the mean open-circuit voltage (Voc), from 0.4 V to 0.6 V, over PbS reference devices. By optimising shell thickness and surface ligands, core/shell CQD devices with average device efficiency of 5.6 % were fabricated as compared to 3.0 % for unshelled PbS devices.

The lower defect density due to better passivation confers lower carrier density in core/shell CQD film. To take advantage of low defect concentration and to aid charge extraction, a 3 dimensional quantum funnel concept was sought of by blending two populations of PbS/CdS CQDs of different sizes. By incorporating a blend component within a heterojunction device, even when the device thickness is beyond what is optimal for the depletion width and the diffusion length of the system, high Voc is still maintained. In a separate study, a p-i-n device strategy was examined, and with this approach, a maximum device efficiency of 6.4 % was achieved.

Despite the improvements made to Voc by optimizing surface passivation, fill factors of the devices are low. By using poly(3-hexylthiophene-2,5-diyl) (P3HT) as a hole transport material (HTM), fill factor and the overall performance improved over a reference device without the HTM. Further studies showed that oxidation of the HTM material results in increased p-type characteristic, thus optimising hole transport. This beneficial oxidation process also makes the device air-stable. From this, devices of up to 8.1 % efficiency and devices with fill factor as high as 0.72 were fabricated.

Authors: Neo, DCJ

• DOI: 10.5287/ora-nzo8mqner
• Type of award: DPhil
• Level of award: Doctoral
• Awarding institution: University of Oxford
• Language: English