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ELECTRONIC-PROPERTIES OF DISLOCATION SEGMENTS IN PLASTICALLY DEFORMED SILICON

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APA Style

Ossipyan, Y., Kveder, V., & Steinman, E. (1989). ELECTRONIC-PROPERTIES OF DISLOCATION SEGMENTS IN PLASTICALLY DEFORMED SILICON. 104, 211–216.

MLA Style

Ossipyan, Y., et al. ELECTRONIC-PROPERTIES OF DISLOCATION SEGMENTS IN PLASTICALLY DEFORMED SILICON. 1989, pp. 211–16.

Chicago Style

Ossipyan, Y, V Kveder, and E Steinman. 1989. “ELECTRONIC-PROPERTIES OF DISLOCATION SEGMENTS IN PLASTICALLY DEFORMED SILICON.” In , 104:211–16.
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Authors

+ Ossipyan, Y More by this author

Role:: Author

+ Kveder, V More by this author

Role:: Author

+ Steinman, E More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 211-216
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Keywords:: COMBINED RESONANCE

LUMINESCENCE

PHOTOLUMINESCENCE
Pubs id:: pubs:8923
UUID:: uuid:39443c31-e032-46fe-80da-6dad5461946e
Local pid:: pubs:8923
Source identifiers:: 8923
Deposit date:: 2012-12-19

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Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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