Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3

Journal article

The bulk and surface electronic structure of In2 O3 has proved controversial, prompting the current combined experimental and theoretical investigation. The band gap of single-crystalline In2 O3 is determined as 2.93±0.15 and 3.02±0.15 eV for the cubic bixbyite and rhombohedral polymorphs, respectively. The valence-band density of states is investigated from x-ray photoemission spectroscopy measurements and density-functional theory calculations. These show excellent agreement, supporting the absence of any significant indirect nature of the In2 O3 band gap. Clear experimental evidence for an s-d coupling between In4d and O2s derived states is also observed. Electron accumulation, recently reported at the (001) surface of bixbyite material, is also shown to be present at the bixbyite (111) surface and the (0001) surface of rhombohedral In2 O3. © 2009 The American Physical Society.

Authors: King, P; Veal, T; Fuchs, F; Wang, C; Payne, D

• Publication status: Published
• Journal: Physical Review B
• Volume: 79
• Issue: 20
• Publication date: 2009-05-01
• DOI: 10.1103/PhysRevB.79.205211
• EISSN: 1550-235X
• ISSN: 1098-0121
• Language: English
• Keywords: electronic density of states; energy gap; valence bands; density functional theory; X-ray photoelectron spectra; surface states; indium compounds