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Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se

Abstract:

Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105 cm2/V⋅s at 2.0 K) and...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's Version

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Publisher copy:
10.1126/sciadv.aat8355

Authors


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Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics
Subgroup:
Condensed Matter Physics
ORCID:
0000-0001-9529-1370
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Publisher:
American Association for the Advancement of Science Publisher's website
Journal:
Science Advances Journal website
Volume:
4
Issue:
9
Pages:
Article: eaat8355
Publication date:
2018-09-14
Acceptance date:
2018-08-07
DOI:
EISSN:
2375-2548
Pubs id:
pubs:920465
URN:
uri:36f5805e-024a-40fc-946d-dbcf46a25b73
UUID:
uuid:36f5805e-024a-40fc-946d-dbcf46a25b73
Local pid:
pubs:920465
Language:
English

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