Journal article
Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se
- Abstract:
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Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105 cm2/V⋅s at 2.0 K) and...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
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(Version of record, pdf, 907.6KB)
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- Publisher copy:
- 10.1126/sciadv.aat8355
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Authors
Bibliographic Details
- Publisher:
- American Association for the Advancement of Science Publisher's website
- Journal:
- Science Advances Journal website
- Volume:
- 4
- Issue:
- 9
- Article number:
- eaat8355
- Publication date:
- 2018-09-14
- Acceptance date:
- 2018-08-07
- DOI:
- EISSN:
-
2375-2548
- Pmid:
-
30225369
- Source identifiers:
-
920465
Item Description
- Language:
- English
- Pubs id:
-
pubs:920465
- UUID:
-
uuid:36f5805e-024a-40fc-946d-dbcf46a25b73
- Local pid:
- pubs:920465
- Deposit date:
- 2019-06-14
Terms of use
- Copyright holder:
- Chen et al
- Copyright date:
- 2018
- Notes:
- Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY).
- Licence:
- CC Attribution (CC BY)
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