Journal article
Room temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bands
- Abstract:
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Semiconductor nano-lasers grown on silicon and emitting at the telecom bands are advantageous ultra-compact coherent light sources for potential Si-based photonic integrated circuit applications. However, realizing room-temperature lasing inside nano-cavities at telecom bands is challenging and has only been demonstrated up to the E band. Here, we report on InP/InGaAs nano-ridge lasers with emission wavelengths ranging from the O, E, and S bands to the C band operating at room temperature wit...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
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(Version of record, pdf, 1.9MB)
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- Publisher copy:
- 10.1364/OPTICA.5.000918
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Authors
Funding
Research Grants Council of Hong Kong
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Innovation Technology Fund of Hong Kong
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Bibliographic Details
- Publisher:
- Optical Society of America Publisher's website
- Journal:
- Optica Journal website
- Volume:
- 5
- Issue:
- 8
- Pages:
- 918-923
- Publication date:
- 2018-07-26
- Acceptance date:
- 2018-07-10
- DOI:
- EISSN:
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0740-3224
- Source identifiers:
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891273
Item Description
- Subjects:
- Pubs id:
-
pubs:891273
- UUID:
-
uuid:36bd70a8-59cd-49c5-9440-fed9aae8aacc
- Local pid:
- pubs:891273
- Deposit date:
- 2018-07-27
Terms of use
- Copyright holder:
- Optical Society of America
- Copyright date:
- 2018
- Notes:
- © 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
- Licence:
- Other
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