- Abstract:
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Semiconductor nano-lasers grown on silicon and emitting at the telecom bands are advantageous ultra-compact coherent light sources for potential Si-based photonic integrated circuit applications. However, realizing room-temperature lasing inside nano-cavities at telecom bands is challenging and has only been demonstrated up to the E band. Here, we report on InP/InGaAs nano-ridge lasers with emission wavelengths ranging from the O, E, and S bands to the C band operating at room temperature wit...
Expand abstract - Publication status:
- Published
- Peer review status:
- Peer reviewed
- Version:
- Publisher's version
- Files:
-
-
(pdf, 1.9mb)
-
- Publisher copy:
- 10.1364/OPTICA.5.000918
-
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- Publisher:
- Optical Society of America Publisher's website
- Journal:
- Optica Journal website
- Volume:
- 5
- Issue:
- 8
- Pages:
- 918-923
- Publication date:
- 2018-07-26
- Acceptance date:
- 2018-07-10
- DOI:
- EISSN:
-
0740-3224
- Pubs id:
-
pubs:891273
- URN:
-
uri:36bd70a8-59cd-49c5-9440-fed9aae8aacc
- UUID:
-
uuid:36bd70a8-59cd-49c5-9440-fed9aae8aacc
- Local pid:
- pubs:891273
- Copyright holder:
- Optical Society of America
- Copyright date:
- 2018
- Notes:
- © 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Journal article
Room temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bands
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Research Grants Council of Hong Kong
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