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Room temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bands

Abstract:

Semiconductor nano-lasers grown on silicon and emitting at the telecom bands are advantageous ultra-compact coherent light sources for potential Si-based photonic integrated circuit applications. However, realizing room-temperature lasing inside nano-cavities at telecom bands is challenging and has only been demonstrated up to the E band. Here, we report on InP/InGaAs nano-ridge lasers with emission wavelengths ranging from the O, E, and S bands to the C band operating at room temperature wit...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1364/OPTICA.5.000918

Authors


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Research Grants Council of Hong Kong More from this funder
Innovation Technology Fund of Hong Kong More from this funder
Publisher:
Optical Society of America Publisher's website
Journal:
Optica Journal website
Volume:
5
Issue:
8
Pages:
918-923
Publication date:
2018-07-26
Acceptance date:
2018-07-10
DOI:
EISSN:
0740-3224
Pubs id:
pubs:891273
URN:
uri:36bd70a8-59cd-49c5-9440-fed9aae8aacc
UUID:
uuid:36bd70a8-59cd-49c5-9440-fed9aae8aacc
Local pid:
pubs:891273

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