Equilibrium shape of CoSi2 hut clusters on Si(100)

Conference item

CoSi2 clusters of constant height on a Si(100) surface grow in a square shape at first, but at a critical size a shape transition to clusters with large aspect ratios occurs. With each cluster connected to an implanted layer of cobalt by a thermally induced defect that serves as a diffusion channel, clusters can grow independently with a continuous supply of cobalt. When the cobalt supply is limited, clusters grow up to a specific volume and then have time to adjust their height, assuming their minimum-energy shape. Although calculations indicate that this should be a square pyramid, experiments indicate that a more elongated cluster corresponds to equilibrium. (C) 1998 American Vacuum Society.

Authors: Brongersma, S; Castell, M; Perovic, D; Zinke-Allmang, M

• Publication status: Published
• Journal: JOURNAL OF VACUUM SCIENCE and TECHNOLOGY B
• Volume: 16
• Issue: 4
• Pages: 2188-2190
• Publication date: 1998-01-01
• Event title: 25th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces
• DOI: 10.1116/1.590146
• ISSN: 1071-1023
• Keywords: SURFACE; GE; Growth; ISLANDS; THIN-FILMS; TRANSITION; MICROSCOPY; SI(001)