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BRITTLE TO DUCTILE TRANSITION IN SILICON.

Abstract:

The brittle to ductile transition in silicon is studied by four-point bend testing of specimens containing controlled flaws. A characteristic increase in fracture stress is observed at the transition temperature which is directly correlated to the generation and motion of dislocations at the crack tip. It seems likely that this mechanism will occur in all brittle solids. The effect of doping upon the temperature of the transition is also investigated. It is found that strongly n-doped specime...

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Authors


Samuels, J More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Publisher:
Inst of Ceramics
Journal:
British Ceramic Proceedings
Issue:
37
Pages:
267-272
Publication date:
1986-10-05
ISSN:
0268-4373
URN:
uuid:32df67f5-aa2e-469b-9fb9-551b5cc48fac
Source identifiers:
430638
Local pid:
pubs:430638
Language:
English

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