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DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE

Abstract:

Modern approaches to the growth of high quality gallium nitride thin films have focused on the use of metal-organic vapour phase epitaxy or plasma-assisted gas source molecular beam epitaxy. However, both of these techniques possess limitations. The present study therefore examined a new approach to GaN deposition using chemical beam epitaxy and the new nitrogen precursor, hydrogen azide. Thin films of gallium nitride (GaN) were successfully prepared. X-ray photoelectron spectroscopy reveals ...

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Publication status:
Published

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Authors


KINGSLEY, C More by this author
WHITAKER, T More by this author
JACKMAN, R More by this author
Volume:
29
Issue:
1-3
Pages:
78-82
Publication date:
1995-01-05
DOI:
ISSN:
0921-5107
URN:
uuid:32bd473e-c382-4568-9e3a-91622c6022b2
Source identifiers:
44741
Local pid:
pubs:44741

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