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MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE

Publication status:: Published

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APA Style

Alexander, H., & Gottschalk, H. (1989). MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE. 104, 281–292.

MLA Style

Alexander, H., and H. Gottschalk. MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE. 1989, pp. 281–92.

Chicago Style

Alexander, H, and H Gottschalk. 1989. “MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE.” In , 104:281–92.
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Authors

+ Alexander, H More by this author

Role:: Author

+ Gottschalk, H More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 281-292
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Keywords:: DEFORMATION

STACKING-FAULT ENERGY

ROOM-TEMPERATURE

IN-DOPED GAAS

ELECTRON-MICROSCOPY

GAAS SINGLE-CRYSTALS

VELOCITIES

SILICON

Behavior

III-V COMPOUNDS
Pubs id:: pubs:16518
UUID:: uuid:32b704fa-a3fe-4644-9df0-4147ccde566f
Local pid:: pubs:16518
Source identifiers:: 16518
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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