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Growth, structural and optical properties of III-V nanowires for optoelectronic applications

Abstract:
We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for device applications. We have fabricated and characterised a variety of axial and radial heterostructures including GaAs/InGaAs superlattices, and GaAs/AlGaAs core-shell and core-multishell nanowires. © 2007 IEEE.

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Publisher copy:
10.1109/NANO.2007.4601321

Authors


Pages:
866-869
Publication date:
2007-01-01
DOI:
URN:
uuid:317eaef9-253c-4131-ad63-ea22229c60ea
Source identifiers:
172748
Local pid:
pubs:172748
ISBN-10:
1424406080
ISBN-13:
9781424406081

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