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Growth, structural and optical properties of III-V nanowires for optoelectronic applications

Abstract:
We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for device applications. We have fabricated and characterised a variety of axial and radial heterostructures including GaAs/InGaAs superlattices, and GaAs/AlGaAs core-shell and core-multishell nanowires. © 2007 IEEE.

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Publisher copy:
10.1109/NANO.2007.4601321

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Host title:
2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages:
866-869
Publication date:
2007-01-01
DOI:
ISBN-10:
1424406080
ISBN-13:
9781424406081


Keywords:
Pubs id:
pubs:172748
UUID:
uuid:317eaef9-253c-4131-ad63-ea22229c60ea
Local pid:
pubs:172748
Source identifiers:
172748
Deposit date:
2012-12-19

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