Conference item
Growth, structural and optical properties of III-V nanowires for optoelectronic applications
- Abstract:
- We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for device applications. We have fabricated and characterised a variety of axial and radial heterostructures including GaAs/InGaAs superlattices, and GaAs/AlGaAs core-shell and core-multishell nanowires. © 2007 IEEE.
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Authors
- Host title:
- 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
- Pages:
- 866-869
- Publication date:
- 2007-01-01
- DOI:
- ISBN-10:
- 1424406080
- ISBN-13:
- 9781424406081
- Keywords:
- Pubs id:
-
pubs:172748
- UUID:
-
uuid:317eaef9-253c-4131-ad63-ea22229c60ea
- Local pid:
-
pubs:172748
- Source identifiers:
-
172748
- Deposit date:
-
2012-12-19
Terms of use
- Copyright date:
- 2007
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