Journal article
P-type conductivity in Sn-doped Sb<sub>2</sub>Se<sub>3</sub>
- Abstract:
- Antimony selenide (Sb2Se3) is a promising absorber material for thin-film photovoltaics. However, certain areas of fundamental understanding of this material remain incomplete and this presents a barrier to further efficiency gains. In particular, recent studies have highlighted the role of majority carrier type and extrinsic doping in drastically changing the performance of high efficiency devices [1]. Herein, Sndoped Sb2Se3 bulk crystals are shown to exhibit p-type conductivity using Hall effect and hot-probe measurements. The measured conductivities are higher than those achieved through native defects alone, but with a carrier density (up to 7.4 × 1014 cm−3) several orders of magnitude smaller than the quantity of Sn included in the source material. Additionally, a combination of ultraviolet, X-ray and hard X-ray photoemission spectroscopies are employed to obtain a non-destructive depth profile of the valence band maximum, confirming p-type conductivity and indicating a majority carrier type inversion layer at the surface. Finally, these results are supported by density functional theory calculations of the defect formation energies in Sn-doped Sb2Se3, showing a possible limit on the carrier concentration achievable with Sn as a dopant. This study sheds light on the effectiveness of Sn as a p-type dopant in Sb2Se3 and highlights avenues for further optimisation of doped Sb2Se3 for solar energy devices
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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(Preview, Version of record, pdf, 2.1MB, Terms of use)
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- Publisher copy:
- 10.1088/2515-7655/ac91a6
Authors
+ U.S. Department of Energy
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- Funder identifier:
- 10.13039/100000015
- Grant:
- DE-SC0016371
+ Engineering and Physical Sciences Research Council
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- Funder identifier:
- 10.13039/501100000266
- Grant:
- EP/L000202
+ Ramsay Memorial Fellowships Trust, University College London
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- Funder identifier:
- 10.13039/501100000685
- Publisher:
- IOP Publishing
- Journal:
- JPhys Energy More from this journal
- Volume:
- 4
- Issue:
- 4
- Pages:
- 045006-045006
- Publication date:
- 2022-09-13
- DOI:
- EISSN:
-
2515-7655
- ISSN:
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2515-7655
- Language:
-
English
- Keywords:
- Pubs id:
-
1282623
- Local pid:
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pubs:1282623
- Source identifiers:
-
W4295837050
- Deposit date:
-
2026-04-29
- ARK identifier:
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Terms of use
- Copyright date:
- 2022
- Licence:
- CC Attribution (CC BY)
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