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P-type conductivity in Sn-doped Sb<sub>2</sub>Se<sub>3</sub>

Abstract:
Antimony selenide (Sb2Se3) is a promising absorber material for thin-film photovoltaics. However, certain areas of fundamental understanding of this material remain incomplete and this presents a barrier to further efficiency gains. In particular, recent studies have highlighted the role of majority carrier type and extrinsic doping in drastically changing the performance of high efficiency devices [1]. Herein, Sndoped Sb2Se3 bulk crystals are shown to exhibit p-type conductivity using Hall effect and hot-probe measurements. The measured conductivities are higher than those achieved through native defects alone, but with a carrier density (up to 7.4 × 1014 cm−3) several orders of magnitude smaller than the quantity of Sn included in the source material. Additionally, a combination of ultraviolet, X-ray and hard X-ray photoemission spectroscopies are employed to obtain a non-destructive depth profile of the valence band maximum, confirming p-type conductivity and indicating a majority carrier type inversion layer at the surface. Finally, these results are supported by density functional theory calculations of the defect formation energies in Sn-doped Sb2Se3, showing a possible limit on the carrier concentration achievable with Sn as a dopant. This study sheds light on the effectiveness of Sn as a p-type dopant in Sb2Se3 and highlights avenues for further optimisation of doped Sb2Se3 for solar energy devices
Publication status:
Published
Peer review status:
Peer reviewed

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Role:
Author
ORCID:
0000-0002-0013-360X
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Role:
Author
ORCID:
0000-0002-0471-2713
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Role:
Author
ORCID:
0000-0002-9052-7484
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Institution:
University of Oxford
Role:
Author
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Institution:
University of Oxford
Role:
Author
ORCID:
0000-0002-4654-3882


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Funder identifier:
10.13039/100000015
Grant:
DE-SC0016371
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Funder identifier:
10.13039/501100000266
Grant:
EP/L000202


Publisher:
IOP Publishing
Journal:
JPhys Energy More from this journal
Volume:
4
Issue:
4
Pages:
045006-045006
Publication date:
2022-09-13
DOI:
EISSN:
2515-7655
ISSN:
2515-7655


Language:
English
Keywords:
Pubs id:
1282623
Local pid:
pubs:1282623
Source identifiers:
W4295837050
Deposit date:
2026-04-29
ARK identifier:
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