Atomic structure of interconnected few-layer graphene domains.

Journal article

The atomic structure at the boundary interface between interconnected few-layer graphene (FLG) domains, synthesized by atmospheric pressure chemical vapor deposition (AP-CVD), is examined using aberration-corrected high-resolution transmission electron microscopy. Moiré patterns in the HRTEM images reveal the presence of rotational stacking faults in the boundary region that extend over distances of ∼100 nm. We show that FLG domains interconnect via two principle processes: graphene sheets from one domain grow over the top of a neighboring domain, while other graphene domains interconnect by direct atomic bonding. Differentiating between these two types of interconnects was found to be possible by examining the HRTEM contrast profiles produced at the interface. Graphene sheets that terminate were found to produce strong edge contrast with increasing defocus values, as well as a broader edge cross section, whereas atomically bonded interfaces were found to not exhibit any contrast, even under large defocus values. These findings are reinforced by correlating with multi-slice TEM image simulations of appropriate structures.

Authors: Robertson, A; Bachmatiuk, A; Wu, Y; Schäffel, F; Rellinghaus, B

• Publication status: Published
• Journal: ACS nano
• Volume: 5
• Issue: 8
• Pages: 6610-6618
• Publication date: 2011-08-01
• DOI: 10.1021/nn202051g
• EISSN: 1936-086X
• ISSN: 1936-0851
• Language: English
• Keywords: grain boundary; graphene; CVD; chemical vapor deposition; aberration-corrected TEM