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Strain in epitaxial MnSi films on Si(111) in the thick film limit studied by polarization-dependent extended x-ray absorption fine structure

Abstract:

We report a study of the strain state of epitaxial MnSi films on Si(111) substrates in the thick film limit (100-500 A) as a function of film thickness using polarization-dependent extended x-ray absorption fine structure (EXAFS). All films investigated are phase-pure and of high quality with a sharp interface between MnSi and Si. The investigated MnSi films are in a thickness regime where the magnetic transition temperature Tc assumes a thickness-independent enhanced value of ≥43 K as compar...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1103/PhysRevB.94.174107

Authors


Figueroa, AI More by this author
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Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Chalasani, R More by this author
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Funding agency for:
Baker, AA
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Publisher:
American Physical Society Publisher's website
Journal:
Physical Review B - Condensed Matter and Materials Physics Journal website
Publication date:
2016-11-15
Acceptance date:
2016-10-17
DOI:
EISSN:
1550-235X
ISSN:
1098-0121
Pubs id:
pubs:652805
URN:
uri:2bfa0941-207e-4bd5-ae97-1d271657742d
UUID:
uuid:2bfa0941-207e-4bd5-ae97-1d271657742d
Local pid:
pubs:652805
Keywords:

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