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Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.

Abstract:

The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs core of GaAs/AlGaAs core-shell nanowires grown by metal-organic chemical vapor deposition are investigated. The carrier lifetime increases with increasing AlGaAs shell thickness up to a certain value as a result of reducing tunneling probability of carriers through the AlGaAs shell, beyond which the carrier lifetime reduces due to the diffusion of Ga-Al and/or impurities across the GaAs/AlGaAs h...

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Publication status:
Published

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Publisher copy:
10.1021/nl4023385

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
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Journal:
Nano letters
Volume:
13
Issue:
11
Pages:
5135-5140
Publication date:
2013-11-05
DOI:
EISSN:
1530-6992
ISSN:
1530-6984
URN:
uuid:2ad78489-62e5-4ad7-a1f5-4781f0bc40d9
Source identifiers:
440574
Local pid:
pubs:440574

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